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 2SC4774 / 2SC4713K
Transistors
High frequency amplifier transistor, RF switching (6V, 50mA)
2SC4774 / 2SC4713K
Features 1) Very low output-on resistance (Ron). 2) Low capacitance.
2SC4774
(1)
0.65 0.65 0.7
0.8
0.3
(3)
1.25 2.1
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 12 6 3 50 0.2 150 -55 to +150 Unit V V V mA W C C
0.15
0.2
(2)
0.1Min.
0~0.1
Each lead has same dimensions
ROHM : UMT3 EIAJ : SC-70
(1) Emitter (2) Base (3) Collector
2SC4713K
Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4774 UMT3 S BM T106 3000 2SC4713K SMT3 S
0.4
Denotes hFE
BM T146 3000
(3)
1.6 2.8
0.15
0.3Min.
0~0.1
Each lead has same dimensions
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
External dimensions (Unit : mm)
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output-on resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron Min. 12 6 3 - - - 270 300 - - Typ. - - - - - - - 800 1 2 Max. - - - 0.5 0.5 0.3 560 - 1.7 - Unit V V V A A V - MHz pF IC=10A IC=1mA IE=10A VCB=10V VEB=2V IC/IB=10mA/1mA VCE/IC=5V/5mA VCE=5V, IE= -10mA, f=200MHz VCB=10V, IE=0A, f=1MHz IB=3mA, VI=100mVrms, f=500kHz Conditions
1.1
0.95 0.95 1.9 2.9
Packaging specifications and hFE
(2)
(1)
0.9
1.3
2.0
Rev.A
1/2
2SC4774 / 2SC4713K
Transistors
Electrical characteristic curves
10
COLLECTOR CURRENT : IC (mA)
125C
COLLECTOR CURRENT : IC (mA)
8
25mA
40
1.0 mA
30mA
COLLECTOR CURRENT : IC (mA)
0.2mA
40
6
20mA 15mA
30
0.1mA
30
4
10mA
20
20
2
5mA
10
IB=0mA 0.4 0.5
10
0 0
1
2
3
IB=0A 4 5
0 0
0.1
0.2
0.3
0 0
0.4
25C
Ta=25C
Ta=25C
-25C
35mA
50
mA A 0.5 0.4m
0.3mA
50
VCE=5V
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
Fig.2 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics ( )
characteristics (
)
characteristics
COLLECTER SATURATION VOLTAGE : VCE(sat) (mA)
DC CURRENT TRANSFER RATIO : hFE
500
Ta=25C VCE=5V
500
Ta=25C IC/IB=10
GAIN BANDWIDTH PRODUCT : fT (MHz)
1000
1000
2000 1000 500
Ta=25C VCE=5V
200 100 50
200 100 50 20 10
200 100 50
20 10 0.1 0.2
5 0.1 0.2 0.5 1 2 5 10 20 50
0.5
1
2
5
10 20
50
20 0.1 0.2
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation
Fig.6 Gain bandwidth product vs.
voltage vs. collector current
collector current
20
20
OUTPUT CAPACITANCE : Cob (pF)
Ta=25C f=1MHz
50
FEEDBACK CAPACITIANCE : Cre (pF)
10 5
10 5
Ta=25C f=1MHz
ON RESISTANE : Ron ()
20 10 5
Ta=25C f=500kHz i=100mVrms RL=1k
2 1 0.5
2 1 0.5
2
0.2 0.1 0.2
0.5
1
2
5
10 20
50
0.2 0.1 0.2
0.5
1
2
5
10 20
50
1 0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASS CURRENT : IB (mA)
Fig.7 Collector output capacitance
Fig.8 Back capacitance voltage
Fig.9 Output-on resistance vs.
vs. voltage
base current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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